91 silicon npn triple diffused planar transistor (high voltage and high speed switchihg transistor) application : switching regulator and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 500 400 10 10( pulse 20) 4 80(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 100 max 400 min 10 to 30 0.5 max 1.3 max 10 typ 85 typ unit m a m a v v v mhz pf conditions v cb =500v v eb =10v i c =25ma v ce =4v, i c =6a i c =6a, i b =1.2a i c =6a, i b =1.2a v ce =12v, i e =?.7a v cb =10v, f=1mhz 2sc4138 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) t on ? stg ? f i c characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat),v be (sat) i c temperature characteristics (typical) pc ta derating reverse bias safe operating area safe operating area (single pulse) 0 0 2 4 6 8 10 2 134 collector-emitter voltage v ce (v) collector current i c (a) 1a 600ma 400ma 200ma 1.2a i b =100ma 0.02 0.1 0.05 110 5 0.5 0 1.4 1 collector-emitter saturation voltage v ce(sat) (v) base-emitter saturation voltage v be(sat) (v) collector current i c (a) v be (sat) v ce (sat) 0.1 1 0.5 10 5 0.1 0.5 5 10 1 switching time t on t stg t f ( s) collector current i c (a) t stg t on t f v cc 200v i c :i b1 :? b2 =10:1:2 0.3 1 3 0.5 1 10 100 1000 time t(ms) transient thermal resistance q j-a (?c/w) 80 60 40 20 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 10 50 5 500 100 1 0.5 0.1 10 30 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling l=3mh ? b2 =1a duty:less than 1% 10 50 5 100 500 1 0.5 0.1 10 30 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling 100 s 1ms (i c /i b =5) 0 10 4 2 8 6 0 1.2 0.4 0.6 0.8 1.0 0.2 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) ?5?c (case temp) 25?c (case temp) 0.02 0.1 0.05 1 10 5 0.5 5 10 100 50 collector current i c (a) dc current gain h fe (v ce =4v) 125?c 25?c ?5?c n typical switching characteristics (common emitter) v cc (v) 200 r l ( ) 33.3 i c (a) 6 v bb2 (v) ? i b2 (a) ?.2 t on ( m s) 1 max t stg ( m s) 3 max t f ( m s) 0.5 max i b1 (a) 0.6 v bb1 (v) 10 external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 2.0g a. part no. b. lot no.
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